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DC ELECTRICAL PROPERTIES OF SOME CHALCOGENIDE GLASSY ALLOYS OF THE SYSTEMSe100-xInx

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  • S. ABOU EL-HASSAN

    (Faculty of Science, Physics Department, Benha University, Benha, Egypt)

Abstract

DC electrical properties of the systemSe100-xInx(x=5, 10, 15, 20at. %) have been investigated I–V characteristics of this system are discussed in terms of the Poole–Frenkel and the Schottky effect. The jump distance(d), charge carrier concentration(n)and trap depth (φ) have been deduced for the system. According to the Arrhenius equation of conductivity, the activation energy of conductionΔw1andΔw2for the two arms of conductivity has been found to be in the range of 0.18–1.2 eV. Both the mobility (μ) and diffusion coefficients are calculated for different compositions at different ambient temperatures. The activation energy due to the mobility(ΔU)and diffusion(ΔQ)mechanisms has been deduced and the values range from 0.02 to 0.4 eV. The behavior ofΔW1,ΔUandΔQhas the same trend with composition, which indicates that the conduction mechanism is controlled by one type of process. The Meyer–Neldel rule has been applied to our results and a confirmation of this rule has been found.

Suggested Citation

  • S. Abou El-Hassan, 2001. "DC ELECTRICAL PROPERTIES OF SOME CHALCOGENIDE GLASSY ALLOYS OF THE SYSTEMSe100-xInx," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(03n04), pages 313-320.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001105
    DOI: 10.1142/S0218625X01001105
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