IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v08y2001i03n04ns0218625x01001014.html
   My bibliography  Save this article

SODIUM AND CHLORINE COADSORPTION ON Si(100)

Author

Listed:
  • M. KAMARATOS

    (Department of Physics, University of Ioannina, PO Box 1186, GR-451 10 Ioannina, Greece)

  • C. A. PAPAGEORGOPOULOS

    (Department of Physics, University of Ioannina, PO Box 1186, GR-451 10 Ioannina, Greece)

Abstract

In this paper we study the adsorption of molecular chlorine on the Si(100)(2 × 1) surface and its interaction with sodium at room and elevated temperature in an ultrahigh vacuum. Cl is deposited dissociatively on the surface and formsSiCl2andSiCl4. During Na deposition on the Cl-covered Si(100) surface, the substrate participates to aNaSiCl2compound formation, whereas Cl deposition on Na-covered Si(100) leads to NaCl formation, which is grown with the (100) plane parallel to the surface. After the completion of the NaCl formation, the excess Cl interacts with the substrate and forms Si–Cl compounds. The presence of Na on the surface prevents partly the chlorination of Si, depending on the amount of Na. At elevated temperatures, the NaCl dissociates according to the equation2NaCl+Si→Na2Cl+SiCland desorbs.

Suggested Citation

  • M. Kamaratos & C. A. Papageorgopoulos, 2001. "SODIUM AND CHLORINE COADSORPTION ON Si(100)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(03n04), pages 261-269.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001014
    DOI: 10.1142/S0218625X01001014
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X01001014
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X01001014?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001014. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.