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ELECTRONIC BAND STRUCTURE OF STEPPED Si(100) SURFACES

Author

Listed:
  • SAED A. SALMAN

    (Department of Physics, Middle East Technical University, 06531 Ankara, Turkey)

  • ŞENAY KATIRCIOĞLU

    (Department of Physics, Middle East Technical University, 06531 Ankara, Turkey)

  • ŞAKIR ERKOÇ

    (Department of Physics, Middle East Technical University, 06531 Ankara, Turkey)

Abstract

We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.

Suggested Citation

  • Saed A. Salman & Şenay Katircioğlu & Şakir Erkoç, 2001. "ELECTRONIC BAND STRUCTURE OF STEPPED Si(100) SURFACES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(01n02), pages 61-66.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:01n02:n:s0218625x01000835
    DOI: 10.1142/S0218625X01000835
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