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SURFACE MORPHOLOGY OFGaNSURFACES DURING MOLECULAR BEAM EPITAXY

Author

Listed:
  • R. M. FEENSTRA

    (Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA)

  • HUAJIE CHEN

    (Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA)

  • V. RAMACHANDRAN

    (Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA)

  • C. D. LEE

    (Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA)

  • A. R. SMITH

    (Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA)

  • J. E. NORTHRUP

    (Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA)

  • T. ZYWIETZ

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin94304, Germany)

  • J. NEUGEBAUER

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin94304, Germany)

  • D. W. GREVE

    (Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA)

Abstract

The reconstruction and surface morphology of gallium nitride (0001) and$(000\bar 1)$surfaces are studied using scanning probe microscopy and reflection high energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to codeposition of indium or magnesium during growth are discussed.

Suggested Citation

  • R. M. Feenstra & Huajie Chen & V. Ramachandran & C. D. Lee & A. R. Smith & J. E. Northrup & T. Zywietz & J. Neugebauer & D. W. Greve, 2000. "SURFACE MORPHOLOGY OFGaNSURFACES DURING MOLECULAR BEAM EPITAXY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 601-606.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000804
    DOI: 10.1142/S0218625X00000804
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