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DYNAMIC LEEM OBSERVATION OFCUNANOSTRUCTURE FORMATION PROCESSES ONSi(111)WITH HYDROGEN

Author

Listed:
  • T. YASUE

    (Fundamental Electronics Research Institute and Academic Frontier, Promotion Center, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan)

  • T. KOSHIKAWA

    (Fundamental Electronics Research Institute and Academic Frontier, Promotion Center, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan)

  • M. JALOCHOWSKI

    (Institute of Physics, University of Marie Curie-Sklodowska, pl M. Curie-Sklodowskiej 1, PL 20-031 Lublin, Poland)

  • E. BAUER

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

Abstract

Dynamic observation of the growth of Cu on clean and hydrogen-terminated Si(111) surfaces was carried out by using low energy electron microscopy (LEEM). On the clean surface, the two-dimensional "5×5" structure is formed, and the formation process of the "5×5" structure depends on the substrate temperature. Triangular islands are grown on the "5×5" structure after further deposition of Cu. On the other hand, the nanoscale islands are directly formed on the hydrogen-terminated surface below about 400°C. Above about 400°C, however, the Cu-induced desorption of hydrogen takes place, and the growth process becomes similar to that on the clean surface.

Suggested Citation

  • T. Yasue & T. Koshikawa & M. Jalochowski & E. Bauer, 2000. "DYNAMIC LEEM OBSERVATION OFCUNANOSTRUCTURE FORMATION PROCESSES ONSi(111)WITH HYDROGEN," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 595-599.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000798
    DOI: 10.1142/S0218625X00000798
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