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A HETEROEPITAXIAL MULTI-ATOMIC-LAYER SYSTEM OF GRAPHENE ANDh-BN

Author

Listed:
  • C. OSHIMA

    (Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan;
    Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26, Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan)

  • N. TANAKA

    (Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan)

  • A. ITOH

    (Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan)

  • E. ROKUTA

    (Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan)

  • K. YAMASHITA

    (Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan)

  • T. SAKURAI

    (Institute for Material Science, Tohoku University, Katahira, Aoba, Sendai 980-8500, Japan)

Abstract

Multi-atomic-layer systems stacked with monolayer graphene/monolayerh-BN/Ni(111) have been grown in an epitaxial manner. The graphene overlayer formation changes drastically the interfacial interaction between theh-BN layer and Ni(111). As a result, a peculiar property of the monolayerh-BN on Ni(111) changes to a bulklike one. Theπ–dorbital hybridization at the interface disappears. Accordingly, a metallic character of monolayerh-BN disappears, the soft TO⊥phonon returns to the bulk one, and the reduced lattice constant ofh-BN on Ni(111) also returns to the bulk one. In contrast, theh-BN overlayer formation does not change the interface between the monolayer graphene and Ni(111). From those data, the strength order of interfacial bonds changes as follows: graphene/Ni(111) > graphene/h-BN >h-BN/Ni(111).

Suggested Citation

  • C. Oshima & N. Tanaka & A. Itoh & E. Rokuta & K. Yamashita & T. Sakurai, 2000. "A HETEROEPITAXIAL MULTI-ATOMIC-LAYER SYSTEM OF GRAPHENE ANDh-BN," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 521-525.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000683
    DOI: 10.1142/S0218625X00000683
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