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ACTIVATED STRAIN RELIEF OFGe/Si(100)ISLANDS

Author

Listed:
  • JEFF DRUCKER

    (Physics Department, University of Texas at El Paso, El Paso, TX 79968-0515, USA;
    Materials Research Institute University of Texas at El Paso, El Paso, TX 79968-0515, USA)

  • YANGTING ZHANG

    (Materials Research Institute University of Texas at El Paso, El Paso, TX 79968-0515, USA)

  • S. A. CHAPARRO

    (Materials Research Institute University of Texas at El Paso, El Paso, TX 79968-0515, USA)

  • D. CHANDRASEKHAR

    (Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA)

  • M. R. MCCARTNEY

    (Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA)

  • DAVID J. SMITH

    (Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA;
    Department of Physics and Astronomy Arizona State University, Tempe, AZ 85287, USA)

Abstract

Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature,T. Si interdiffusion forT≥ 550°Cforms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation forT≥ 600°C.

Suggested Citation

  • Jeff Drucker & Yangting Zhang & S. A. Chaparro & D. Chandrasekhar & M. R. Mccartney & David J. Smith, 2000. "ACTIVATED STRAIN RELIEF OFGe/Si(100)ISLANDS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 527-531.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000531
    DOI: 10.1142/S0218625X00000531
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