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THE ATOMIC STRUCTURE OFSi(111)-$(\sqrt{3}\times\sqrt{3})$R30°-GaDETERMINED BY AUTOMATED TENSOR LEED

Author

Listed:
  • WENHUA CHEN

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China)

  • HUASHENG WU

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China)

  • WING KIN HO

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China)

  • B. C. DENG

    (Department of Basic Courses, South China Construction University, Guangzhou 510405, China)

  • GENG XU

    (Department of Physics, Zhongshan University, Guangzhou 510275, China)

  • S. Y. TONG

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;
    Department of Physics and Laboratory for Surface Studies, University of Wisconsin–Milwaukee, Milwaukee, WI 53201, USA)

Abstract

The atomic structure of theSi(111)-$(\sqrt{3}\times\sqrt{3})$R30°-Ga surface has been studied by comparing measured low-energy electron diffraction (LEED) intensity (IV) curves with calculated IV spectra using the method of automated tensor LEED. The experimental LEED IV curves used in this work contain many beams and a wide energy range. The results show that the Ga atoms occupy T4sites, at 2.62 Å above the second-atomic-layer Si atoms. The Ga–Si vertical spacing is 1.44 Å and the bond length between the Ga atom and the first-layer Si atom is 2.52 Å. Large bucklings are found in the first and second Si bilayers below the adatom layer.

Suggested Citation

  • Wenhua Chen & Huasheng Wu & Wing Kin Ho & B. C. Deng & Geng Xu & S. Y. Tong, 2000. "THE ATOMIC STRUCTURE OFSi(111)-$(\sqrt{3}\times\sqrt{3})$R30°-GaDETERMINED BY AUTOMATED TENSOR LEED," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(03), pages 267-270.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:03:n:s0218625x0000035x
    DOI: 10.1142/S0218625X0000035X
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