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IN SITUHALL MEASUREMENTS OFFeANDCrSUBMONOLAYERS ONSi(111)OFn- ANDp-TYPE CONDUCTIVITY

Author

Listed:
  • N. G. GALKIN

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia;
    Far Eastern State University, 690000, Vladivostok, Russia)

  • D. L. GOROSHKO

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia)

  • A. V. KONCHENKO

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia;
    Far Eastern State Technical University, 690069, Vladivostok, Russia)

  • V. A. IVANOV

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia;
    Far Eastern State University, 690000, Vladivostok, Russia)

  • E. S. ZAKHAROVA

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia;
    Far Eastern State University, 690000, Vladivostok, Russia)

  • S. TS. KRIVOSHCHAPOV

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russia;
    Far Eastern State University, 690000, Vladivostok, Russia)

Abstract

By the method ofin situHall effect measurements at room temperature, it was shown that the formation of a cleanSi(111)(7×7) surface at high temperature annealing (T=1250°,t=120–180 s) of n-type conductivity silicon results in a change of the majority carriers on a surface. But on a surface of p-type conductivity silicon it results in the formation of a hole accumulated layer. Various dynamics of changes in the Hall voltage and resistivity voltage within the limits of the first monolayer of room temperature adsorption of iron and chromium on substrates with a p–n junction and with a hole accumulated layer are not connected with conductivity along an absorbed layer. To understand the mechanism of conductivity in a system adsorbed layer Fe(Cr)/Si(111)(7×7), it is necessary to take into account two effects: (a) destruction of the superstructureSi(111)(7×7); (b) formation of donor-type surface states of Fe(Cr) in the band gap of silicon. Destruction of the localized surface states of the superstructureSi(111)(7×7) plays the greatest role, when the density of donor-type surface states is very small. It corresponds to adsorption of Cr onSi(111)of p-type conductivity. The greatest contribution of donor-type surface states to the conductivity of the surface space-charge layer was observed with adsorption of Fe onSi(111)of n-type conductivity. Conductivity through the adsorbed iron (chromium) layer began with a thickness more than three monolayers.

Suggested Citation

  • N. G. Galkin & D. L. Goroshko & A. V. Konchenko & V. A. Ivanov & E. S. Zakharova & S. Ts. Krivoshchapov, 2000. "IN SITUHALL MEASUREMENTS OFFeANDCrSUBMONOLAYERS ONSi(111)OFn- ANDp-TYPE CONDUCTIVITY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(03), pages 257-265.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:03:n:s0218625x00000294
    DOI: 10.1142/S0218625X00000294
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