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A SYNCHROTRON RADIATION STUDY OF THE FORMATION OFCuxSeyANDNaxCuySezTHIN FILMS ONCuSUBSTRATES: Cl2-INDUCED OUT-DIFFUSION OFNa

Author

Listed:
  • V. SALTAS

    (Department of Physics, University of Ioannina, PO Box 1186, GR-451 10 Ioannina, Greece)

  • C. A. PAPAGEORGOPOULOS

    (Department of Physics, University of Ioannina, PO Box 1186, GR-451 10 Ioannina, Greece)

  • D. C. PAPAGEORGOPOULOS

    (FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ, Amsterdam, The Netherlands)

  • D. TONTI

    (Hahn-Meitner Institut, Gleinicker Strasse 100, D-14109 Berlin, Germany)

  • C. PETTENKOFER

    (Hahn-Meitner Institut, Gleinicker Strasse 100, D-14109 Berlin, Germany)

  • W. JAEGERMANN

    (Fachbereich 21, Material wissenschaften, Technische Universität Darmstadt, Petersenstrasse 23, D-64287 Darmstadt, Germany)

Abstract

In this paper we study the growth ofCuxSeyandNaxCuySezthin films on polycrystalline Cu substrates. The investigation took placein situby means of photoemission spectroscopy with synchrotron radiation, in UHV. Deposition of elemental Se with a dense flux on a polycrystalline Cu substrate at RT and subsequent heating to 100°C causes the formation of a thickCu2-xSefilm (withxequal or very close to zero). A phase transition of this copper selenide occurs by annealing at 200°C. Deposited Na on theCu2-xSefilm is diffused into the bulk, resulting in the formation of aNaxCuySezcompound. Exposure toCl2at 120°C causes the out-diffusion of Na to the surface, where NaCl is formed. The Na diffusion in and out of the copper selenide film is analogous to alkali intercalation–deintercalation fromTX2layer compounds.

Suggested Citation

  • V. Saltas & C. A. Papageorgopoulos & D. C. Papageorgopoulos & D. Tonti & C. Pettenkofer & W. Jaegermann, 2000. "A SYNCHROTRON RADIATION STUDY OF THE FORMATION OFCuxSeyANDNaxCuySezTHIN FILMS ONCuSUBSTRATES: Cl2-INDUCED OUT-DIFFUSION OFNa," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(03), pages 235-242.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:03:n:s0218625x00000270
    DOI: 10.1142/S0218625X00000270
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