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Interface Magnetization Effect In Stressed Semimagnetic Heterojunctions

Author

Listed:
  • N. MALKOVA

    (Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova)

  • V. KANTSER

    (Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova)

Abstract

A model of the interface magnetization effect based on magnetic properties of the interface Tamm-like states is continuing to develop. The interface spin-polarized states of the stressed heterojunctions formed from the narrow-gap semimagnetic semiconductors with antiferromagnetic ordering are studied in the framework of the two-band envelope function approximation including far-band corrections. The effect of far-band corrections is shown to be conditioned by the mutual movement of the actual bands of the initial semiconductors, resulting in a change of the energy interval in which the interface states exist. Magnetization is expected when the Fermi level lies in one of the interface bands. By the use of appropriate parameters, the value of the relative interface magnetization is calculated.

Suggested Citation

  • N. Malkova & V. Kantser, 2000. "Interface Magnetization Effect In Stressed Semimagnetic Heterojunctions," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(01n02), pages 127-134.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:01n02:n:s0218625x00000178
    DOI: 10.1142/S0218625X00000178
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