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EMISSION DEPTH DISTRIBUTION FUNCTION OF Al2sPHOTOELECTRONS IN Al2O3

Author

Listed:
  • S. HUCEK

    (Institute of Parasitology, Academy of Sciences, Branišovská 31, 370 05 České Budějovice, Czech Republic)

  • J. ZEMEK

    (Institute of Physics, Academy of Sciences, Cukrovarnická 10, 162 53 Prague 6 , Czech Republic)

  • A. JABLONSKI

    (Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warsaw, Poland)

  • I. S. TILININ

    (Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, 1 Cyclotron Road, Berkeley, CA 94720, USA)

Abstract

The escape probability of Al 2s photoelectrons leaving an aluminum oxide sample (Al2O3) has been studied as a function of depth of origin. It has been found that the escape probability (the so-called emission depth distribution function — DDF) depends strongly on the photoelectron emission direction with respect to that of the incident X-ray beam. In particular, in the emission direction close to that of photon propagation, the DDF differs substantially from the simple Beer–Lambert law and exhibits a nonmonotonic behavior with a maximum in the near-surface region at a depth of about 10 Å. Experimental results are in good agreement with theoretical predictions based on Monte Carlo simulations of the electron transport and with analytical solution of the linearized Boltzmann kinetic equation with appropriate boundary conditions. Both theoretical approaches take into account multiple elastic scattering of photoelectrons on their way out of the sample. It is shown that the commonly used straight line approximation (SLA), which neglects elastic scattering effects, fails to describe adequately experimental data at emission directions close to minima of the differential photoelectric cross section.

Suggested Citation

  • S. Hucek & J. Zemek & A. Jablonski & I. S. Tilinin, 2000. "EMISSION DEPTH DISTRIBUTION FUNCTION OF Al2sPHOTOELECTRONS IN Al2O3," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(01n02), pages 109-114.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:01n02:n:s0218625x00000142
    DOI: 10.1142/S0218625X00000142
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