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ATOMIC STRUCTURE AND ENERGETICS OF VACANCIES IN A SUBLAYER OF GaAs(110)

Author

Listed:
  • JAE-YEL YI

    (Department of Physics, Dong-A University, 840 Hadan-Dong, Saha-Gu, Pusan 604-714, Korea)

  • JA-YONG KOO

    (Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)

  • SEKYUNG LEE

    (Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)

  • DONG-HYUK SHIN

    (Department of Physics, Dongguk University, Pil-Dong 3-26, Chung-Gu, Seoul 100-715, Korea)

  • JEONG SOOK HA

    (Electronics and Telecommunications Research Institute, PO Box 106, Yusong, Taejon 305-600, Korea)

Abstract

The energetics and structure of vacancies in the second layer of GaAs(110) were examined using theab initiototal energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.

Suggested Citation

  • Jae-Yel Yi & Ja-Yong Koo & Sekyung Lee & Dong-Hyuk Shin & Jeong Sook Ha, 2000. "ATOMIC STRUCTURE AND ENERGETICS OF VACANCIES IN A SUBLAYER OF GaAs(110)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(01n02), pages 55-59.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:01n02:n:s0218625x00000087
    DOI: 10.1142/S0218625X00000087
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