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EPITAXIAL GROWTH OF SiO2ON Mo(112)

Author

Listed:
  • T. SCHROEDER

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany)

  • M. ADELT

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany)

  • B. RICHTER

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany)

  • M. NASCHITZKI

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany)

  • M. BÄUMER

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany;)

  • H.-J. FREUND

    (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 14195 Berlin, Germany)

Abstract

A new preparation is reported which, for the first time, results in a thin, crystalline SiO2film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to control film stoichiometry. LEED pictures of high contrast show a hexagonal, crystalline SiO2overlayer with a commensurate relationship to the Mo(112) substrate. The wetting of the substrate by the film has been investigated by LEED, XPS and TDS, revealing that the film covers the substrate completely.

Suggested Citation

  • T. Schroeder & M. Adelt & B. Richter & M. Naschitzki & M. Bäumer & H.-J. Freund, 2000. "EPITAXIAL GROWTH OF SiO2ON Mo(112)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(01n02), pages 7-14.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:01n02:n:s0218625x00000038
    DOI: 10.1142/S0218625X00000038
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