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XPD STUDY OF VANADIUM OXIDE FILMS GROWN ON THESnO2(110)SURFACE

Author

Listed:
  • A. ATREI

    (Dipartimento di Scienze e Tecnologie Chimiche e dei Biosistemi, Università di Siena, 53100, Siena, Italy)

  • U. BARDIB

    (Dipartimento di Chimica, Università di Firenze. 50129, Firenze, Italy)

  • B. CORTIGIANI

    (Dipartimento di Chimica, Università di Firenze. 50129, Firenze, Italy)

  • G. ROVIDA

    (Dipartimento di Chimica, Università di Firenze. 50129, Firenze, Italy)

Abstract

The oxide phases formed upon annealing at 800 K of ultrathin vanadium films deposited on theSnO2(110)surface have been investigated by XPD and other techniques. We found that the annealing in vacuum of vanadium layers results in the oxidation of the metal carried out by lattice oxygen diffusing from the bulk ofSnO2. The vanadium oxide phase formed in this way is epitaxially oriented with respect to the substrate and is covered by disordered layers of tin oxide. The XPD results rule out the formation of V–Sn mixed oxides. The simulation of the experimental XPD curves with SSC calculations performed for various structural models indicates that the product of the oxidation is aVOx ≈ 2phase with a structure close to that of the rutileVO2(110)surface.

Suggested Citation

  • A. Atrei & U. Bardib & B. Cortigiani & G. Rovida, 1999. "XPD STUDY OF VANADIUM OXIDE FILMS GROWN ON THESnO2(110)SURFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1187-1193.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001323
    DOI: 10.1142/S0218625X99001323
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