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Structure Of Chemically Prepared Passivation Layers On Single Crystal Semiconductor Surfaces

Author

Listed:
  • A. P. HITCHCOCK

    (Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1, Canada)

  • T. TYLISZCZAK

    (Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1, Canada)

  • P. BRODERSEN

    (Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON L8S 4M1, Canada)

  • Z. H. LU

    (Department of Metallurgy and Materials Science, University of Toronto, Toronto, ON M5S 3E4, Canada)

  • M. W. C. DHARMA-WARDANA

    (Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada)

Abstract

Monolayers of S and Cl have useful passivation properties for group IV and III–V semiconductor surfaces. The structures of Ge(111)–Cl; GaAs(111)–Cl; GaAs(111)A–S, GaAs(111)B–S and GaAs(001)–S monolayer-passivated single crystal semiconductor surfaces have been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals are interpreted using comparisons to multiple scattering XAFS calculations and, in the cases of Ge(111)–Cl and GaAs(111)–Cl, comparison to first-principles calculations. Relationships between the surface structure and the development of improved passivated surfaces are discussed.

Suggested Citation

  • A. P. Hitchcock & T. Tyliszczak & P. Brodersen & Z. H. Lu & M. W. C. Dharma-Wardana, 1999. "Structure Of Chemically Prepared Passivation Layers On Single Crystal Semiconductor Surfaces," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1109-1120.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001232
    DOI: 10.1142/S0218625X99001232
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