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EPITAXIAL GROWTH OFSrF2ONGe(111)-c(2×8)AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

Author

Listed:
  • S. OMORI

    (Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan)

  • T. KOZAKAI

    (Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan)

  • Y. NIHEI

    (Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan)

Abstract

We have investigated the photoelectron diffraction (PED) from aSrF2epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Suggested Citation

  • S. Omori & T. Kozakai & Y. Nihei, 1999. "EPITAXIAL GROWTH OFSrF2ONGe(111)-c(2×8)AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1085-1089.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001190
    DOI: 10.1142/S0218625X99001190
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