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IN SITUGROWTH STUDIES OF InAND GaON Si(001) USING STM

Author

Listed:
  • J. NOGAMI

    (Department of Materials Science and Mechanics, Michigan State University, East Lansing, MI 48824, USA)

  • M. M. R. EVANS

    (Department of Physics, University of Wisconsin — Eau Claire, Eau Claire, WI 54702-4004, USA)

Abstract

In an STM experiment, the ability to look at the same area of the surface at different stages of growth gives information on phenomena such as nucleation that would be difficult or impossible to obtain otherwise. In this paper, we illustrate the usefulness of this capability by showingin situgrowth data for In and Ga on Si(001). We show that in this system, nucleation is not dominated by defects on the substrate, and that one-dimensional metal rows grow by preferential accommodation of metal atoms at the row ends.

Suggested Citation

  • J. Nogami & M. M. R. Evans, 1999. "IN SITUGROWTH STUDIES OF InAND GaON Si(001) USING STM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1067-1071.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001165
    DOI: 10.1142/S0218625X99001165
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