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MODEL ON SIZE/TYPE CONVERSION OF STACKING-FAULTED HALF ON QUENCHED Si(111) SURFACE

Author

Listed:
  • T. KATO

    (Fukuoka Institute of Technology, Wajiro, Fukuoka 811-0295, Japan)

  • M. UCHIBE

    (Fukuoka Institute of Technology, Wajiro, Fukuoka 811-0295, Japan)

  • W. SHIMADA

    (Department of Molecular and Material Sciences, Kyushu University, Kasuga 816-8580, Japan)

  • H. TOCHIHARA

    (Department of Molecular and Material Sciences, Kyushu University, Kasuga 816-8580, Japan)

Abstract

Recent revelation on even-sized stacking-faulted halves as well as irregular odd-sized ones on the quenched Si(111) surface is theoretically studied. The employed model for the analysis is an extended version of the cell model which was proposed to interpret the phase transition of the7×7structure in terms of the formation energy of each element of the DAS structure. The probability distributions of the various sizes/types of stacking-faulted halves are calculated in corresponding situations of the experiment. The calculated probability distributions are qualitatively coincident with the experimental result.

Suggested Citation

  • T. Kato & M. Uchibe & W. Shimada & H. Tochihara, 1999. "MODEL ON SIZE/TYPE CONVERSION OF STACKING-FAULTED HALF ON QUENCHED Si(111) SURFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1037-1043.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001128
    DOI: 10.1142/S0218625X99001128
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