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Ge/Ag(111): SURFACE ALLOY OF A SEMICONDUCTOR ON A METAL

Author

Listed:
  • H. OUGHADDOU

    (CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

  • B. AUFRAY

    (CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

  • J. M. GAY

    (CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

Abstract

We present one of the first experimental studies of the formation of an ordered surface alloy of a semiconductor, Ge, and a metal, Ag, with bulk tendency to phase separation. The kinetics of growth at room temperature as well as the surface segregation of Ge have been investigated for the (111) orientation using Auger Electron Spectroscopy (AES) and Low Electron Energy Diffraction (LEED).The growth mode of Ge on Ag(111) is layer-by-layer like up to at least two layers. An unexpected ordered surface alloy forming a$p(\sqrt 3\times \sqrt 3)R30^\circ$superstructure is observed during the growth at 1/3 germanium monolayer, followed by ap(7× 7)superstructure at one-monolayer coverage. The surface Ge segregation studied via both dissolution and segregation kinetics shows the particular stability of the ordered$p(\sqrt 3 \times \sqrt 3)R30^\circ$surface alloy.

Suggested Citation

  • H. Oughaddou & B. Aufray & J. M. Gay, 1999. "Ge/Ag(111): SURFACE ALLOY OF A SEMICONDUCTOR ON A METAL," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(05), pages 929-934.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:05:n:s0218625x99001001
    DOI: 10.1142/S0218625X99001001
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    Keywords

    ; 68.35.-p; 71.55.Ak; 68.35.B; 82.80.p; 61.14.H;
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