IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v06y1999i05ns0218625x99000792.html
   My bibliography  Save this article

ALLOY FORMATION OF ULTRATHIN NiFILMS ON Al(111) SURFACE AT ROOM TEMPERATURE

Author

Listed:
  • Y. W. KIM

    (Department of Physics, Montana State University, Bozeman, Montana 59717, USA)

  • G. A. WHITE

    (Department of Physics, Montana State University, Bozeman, Montana 59717, USA)

  • R. REIBEL

    (Department of Physics, Montana State University, Bozeman, Montana 59717, USA)

  • R. J. SMITH

    (Department of Physics, Montana State University, Bozeman, Montana 59717, USA)

Abstract

The growth characteristics of ultrathin Ni films deposited on Al(111) surfaces at room temperature have been studied using high energy ion scattering/channeling (HEIS), X-ray photoelectron spectroscopy (XPS) and low energy ion scattering (LEIS). Ion channeling results show that Ni atoms deposited on the Al(111) surface react with Al substrate atoms to form two different Ni–Al alloys between 0 and 5.5 ML of Ni coverage. Alloy phases ofNi2Al3up to 1.5 ML and NiAl up to 5.5 ML were determined by XPS peak analysis. At higher Ni coverage, LEIS and XPS spectra suggest that islands of Ni metal were formed on the surface. Diffusion of Ni into the Al substrate or segregation of Al to the surface was observed during the alloy formation. TheNi2Al3phase was apparently transformed into the NiAl phase by the additional Ni deposition, and the islands of Ni metal formed on the Al-rich surface of the NiAl alloy.

Suggested Citation

  • Y. W. Kim & G. A. White & R. Reibel & R. J. Smith, 1999. "ALLOY FORMATION OF ULTRATHIN NiFILMS ON Al(111) SURFACE AT ROOM TEMPERATURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(05), pages 781-786.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:05:n:s0218625x99000792
    DOI: 10.1142/S0218625X99000792
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X99000792
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X99000792?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:06:y:1999:i:05:n:s0218625x99000792. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.