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LASER-INDUCED PROCESS OF BINARY ALLOYING OFGe–Se

Author

Listed:
  • S. K. BHADRA

    (Central Glass & Ceramic Research Institute, Jadavpur, Calcutta–700 032, India)

  • T. BANDYOPADHYAY

    (Central Glass & Ceramic Research Institute, Jadavpur, Calcutta–700 032, India)

  • A. K. MAITI

    (Department of Physics, Jadavpur University, PO Jadavpur University, Calcutta–700 032, India)

  • K. GOSWAMI

    (Department of Physics, Jadavpur University, PO Jadavpur University, Calcutta–700 032, India)

Abstract

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

Suggested Citation

  • S. K. Bhadra & T. Bandyopadhyay & A. K. Maiti & K. Goswami, 1999. "LASER-INDUCED PROCESS OF BINARY ALLOYING OFGe–Se," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(02), pages 219-223.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:02:n:s0218625x99000251
    DOI: 10.1142/S0218625X99000251
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