IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v06y1999i01ns0218625x99000032.html
   My bibliography  Save this article

IN SITUHALL MEASUREMENTS OF MACROSCOPIC ELECTRICAL PROPERTIES OF CHROMIUM-COVEREDSi(111)SURFACES

Author

Listed:
  • N. G. GALKIN

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia;
    Far Eastern State Technical University, 690069, Vladivostok, Russian Federation, Russia)

  • D. L. GOROSHKO

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia)

  • A. V. KONCHENKO

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia)

  • V. A. IVANOV

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia;
    Far Eastern State University, 690000, Vladivostok, Russian Federation, Russia)

  • A. S. GOURALNIK

    (Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia)

Abstract

The firstin situHall measurements of the ordered chromium surface phases on Si(111) substrate and CrSi(111) epitaxial films after their formation are presented. Formation ofSi(111)-(1× 1)-Cr(0.1 nm Cr) and Si(111)-[(${\sqrt 3}\times {\sqrt 3}$)/30°]-Cr (0.3 nm Cr) surface phases results in an increase in the sheet resistivity of Si(111)-Cr surface phase samples. The conductivities along the surface phases at these chromium thicknesses are very low. The conductivity decrease is caused by a decrease in the electron mobility in the surface phase layers. Formation of an epitaxial CrSi(111) layer with averaged Hall parameters (hole mobility of440cm2·V-1·s-1, sheet resistivity of2.2·104Ω-1and sheet hole concentration of0.65·1012cm-2) has been observed at 1.5–1.8 nm of chromium thickness.

Suggested Citation

  • N. G. Galkin & D. L. Goroshko & A. V. Konchenko & V. A. Ivanov & A. S. Gouralnik, 1999. "IN SITUHALL MEASUREMENTS OF MACROSCOPIC ELECTRICAL PROPERTIES OF CHROMIUM-COVEREDSi(111)SURFACES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(01), pages 7-12.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:01:n:s0218625x99000032
    DOI: 10.1142/S0218625X99000032
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X99000032
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X99000032?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:06:y:1999:i:01:n:s0218625x99000032. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.