IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v05y1998i03n04ns0218625x9800102x.html
   My bibliography  Save this article

Formation and Chemical Selectivity of Partially Ga-Terminated Si(111) Surfaces

Author

Listed:
  • Masakazu Ichikawa

    (Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan)

  • Ken Fujita

    (Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan)

  • Yukihiro Kusumi

    (Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan)

Abstract

Nanoscale stripes of the Si(111)-(7 × 7) structure with atomic accuracy can be formed on the$(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Ga}$-terminated Si(111) surface, by selective thermal desorption of Ga atoms from step edges, when the surface is tilted toward the$[\bar{1}\bar{1}2]$direction. The nanoscale stripes of the 7 × 7 structure can also be formed in expected areas by selective thermal desorption of Ga atoms induced by STM stimulation. A Ga-terminated area is found to be chemically less active for adsorption of oxygen, disilane and antimony molecules which selectively react in the 7 × 7 area. By using the chemical selectivity and the nanoscale 7 × 7 stripe for formation method, a stripe pattern with the antimony-adsorbed 7 × 7 areas and$(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Ga}$areas is produced as a demonstration of nanostructure formation.

Suggested Citation

  • Masakazu Ichikawa & Ken Fujita & Yukihiro Kusumi, 1998. "Formation and Chemical Selectivity of Partially Ga-Terminated Si(111) Surfaces," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(03n04), pages 665-673.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x9800102x
    DOI: 10.1142/S0218625X9800102X
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X9800102X
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X9800102X?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x9800102x. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.