Author
Listed:
- Koyu Aoki
(Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan)
- Hiroki Minoda
(Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan)
- Yasumasa Tanishiro
(Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan)
- Katsumichi Yagi
(Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan)
Abstract
Initial stages of Au adsorption processes on Si(111)-(7 × 7) surfaces at~780°C, a temperature range where the surface structure undergoes successive phase transitions [(7 × 7)–("1 × 1")–(5×2)–("1 × 1")], were observedin situby reflection electron microscopy. All of the phase transitions are heterogeneous on the surface and start at surface atomic steps. During Au adsorption on Si(111)-(7 × 7), and subsequently on Si(111)-("1 × 1") surface with wide terraces, steps advance toward the step-down direction. At a Au coverage of~0.3ML, the 5 × 2 structure nucleates at step edges, and the nuclei expand both to the lower side terraces and to the higher side terraces. At this stage, an effect of current for heating the specimen was noted. From measurements of such movements of the steps and the domain boundaries, the density of Si atoms in the "1 × 1" phase is estimated to be 1.3–1.7 ML at a Au coverage of~0.3ML. Au adsorption on Si(111) surfaces with narrow terraces causes bunching of the steps. After nucleation of the 5 × 2 structure, the bunched$[\bar{1}\bar{1}2]$steps become straight along the$[1\bar{1}0]$direction, and are transformed into the (335) facet planes at a Au coverage of 0.50 ML. It was found that the (335) facet planes are stabilized by adsorbed Au atoms. Destruction of the (335) facet is noted at a Au coverage of 0.73 ML.
Suggested Citation
Koyu Aoki & Hiroki Minoda & Yasumasa Tanishiro & Katsumichi Yagi, 1998.
"REM Studies of Adsorption-Induced Phase Transitions and Faceting in the Si(111)-AuSystem,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(03n04), pages 653-663.
Handle:
RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x98001018
DOI: 10.1142/S0218625X98001018
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