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Growth and Analysis of Red, Green and Blue Luminescent Oxide Thin Films

Author

Listed:
  • G. A. Hirata

    (Centro de Ciencias de la Materia Condensada-UNAM, Ensenada, B. C. 22860, Mexico)

  • J. Mckittrick

    (AMES Department and Materials Science Program, University of California at San Diego, La Jolla, CA 92093 0411, USA)

  • D. Devlin

    (MST Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA)

Abstract

The growth and characterization of europium (Eu3+) and terbium (Tb3+) doped yttrium aluminum garnet (Y3Al5O12or YAG) and undopedZnGa2O4photoluminescent thin films deposited on sapphire substrates at 400°C by excimer pulsed laser ablation is reported. Smooth, continuous 500-nm-thick amorphous films were produced with compositions depleted in oxygen. Luminescence measurements on the as-deposited and on annealed samples revealed that heat treatments at temperatures > 800°C were necessary to induce crystallization and reoxygenate, which coincided with the onset of luminescence. Annealing produced randomly oriented grains on the order of 15-200 nm.

Suggested Citation

  • G. A. Hirata & J. Mckittrick & D. Devlin, 1998. "Growth and Analysis of Red, Green and Blue Luminescent Oxide Thin Films," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 413-417.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000761
    DOI: 10.1142/S0218625X98000761
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