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Photoemission Study of Quantum Well States in Thin ErAs Films on GaAs(100)

Author

Listed:
  • C. Wigren

    (Department of Synchrotron Radiation Research Institute of Physics, Lund University, S-223 62 Lund, Sweden)

  • L. Ilver

    (Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden)

  • J. Kanski

    (Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden)

  • P. O. Nilsson

    (Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden)

  • U. O. Karlsson

    (Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden)

Abstract

Quantum well states in very thin epitaxial ErAs layers on GaAs(100) have been found in angle-resolved photoelectron spectra. From the dispersive properties of the quantum well states effective masses are obtained representing electron motion parallel to the surface layers and orthogonal to the layers.

Suggested Citation

  • C. Wigren & L. Ilver & J. Kanski & P. O. Nilsson & U. O. Karlsson, 1998. "Photoemission Study of Quantum Well States in Thin ErAs Films on GaAs(100)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 299-303.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000554
    DOI: 10.1142/S0218625X98000554
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