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Growth of the Organic Molecular Semiconductor PTCDA on Se-Passivated GaAs(100): An STM Study

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  • C. Kendrick

    (Department of Electrical Engineering, Princeton University, NJ 08544, USA)

  • A. Kahn

    (Department of Electrical Engineering, Princeton University, NJ 08544, USA)

Abstract

We investigate the monolayer and multilayer growth of the organic molecular semiconductor (OMS) 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) on the Se-passivated GaAs(100) (2 × 1) surface using STM. Deposition of ~2 ML PTCDA at room temperature results in the formation of clusters, implying good chemical passivation of the substrate. However, we also find a significant number of molecules pinned at high energy defect sites, some of which induce molecular ordering. At higher PTCDA coverage we find that the film invariably orients to the substrate revealing a critical, though weak, molecule-substrate interaction. We present the first molecularly resolved STM images obtained from a thick PTCDA film (~ 60 Å) and show unit cell dimensions and orientation in excellent greement with our previous LEED study.

Suggested Citation

  • C. Kendrick & A. Kahn, 1998. "Growth of the Organic Molecular Semiconductor PTCDA on Se-Passivated GaAs(100): An STM Study," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 289-293.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000530
    DOI: 10.1142/S0218625X98000530
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