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Structural and Spectroscopic Investigation of the In-Terminated InAs(100)(4 × 2)/c(8 × 2)Reconstruction

Author

Listed:
  • C. Kendrick

    (Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA)

  • A. Kahn

    (Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA)

  • G. Le Lay

    (Centre de Recherche sur les Mécanismes de la Croissance Cristalline-CNRS, Campus de Luminy, Case 913, F-13288 Marseille Cedex 9, France)

Abstract

We investigate the In-rich(4 × 2)/c(8 × 2)reconstruction of InAs(100) via low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). LEED shows a highly ordered surface with a mixture of(4 × 2)andc(8 × 2)phases. Atomic-resolution STM images are consistent with a previously proposed model for the(4 × 2)surface where the unit cell contains one In dimer in the first layer and two In dimers in the third layer. A defect identified at the transition between(4 × 2)andc(8 × 2)phases appears as two bright spots located in the middle of the top In-dimer rows in filled-state images. The spots are absent in empty-state images but are replaced by intensity due to empty In dangling bonds. We discuss possible origins of this defect based on either the presence of excess In or a sulfur dopant atom.

Suggested Citation

  • C. Kendrick & A. Kahn & G. Le Lay, 1998. "Structural and Spectroscopic Investigation of the In-Terminated InAs(100)(4 × 2)/c(8 × 2)Reconstruction," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 229-234.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000426
    DOI: 10.1142/S0218625X98000426
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