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An ISS Study of Ga-Dimer Arrangement in the GaP(001)-(4 × 2) Surface

Author

Listed:
  • N. Oishi

    (Kumamoto National College of Technology, Kumamoto 861-11, Japan)

  • F. Shoji

    (Kyushu Kyoritsu University, Yahatanishi, Kitakyushu 807, Japan)

  • A. Konishi

    (Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan)

  • M. Naitoh

    (Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan)

  • S. Nishigaki

    (Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan)

Abstract

A GaP(001) Ga-rich surface produced by ion sputtering followed by annealing exhibited a4 × 2LEED pattern with half streaks in the [110] direction. We have studied the structure of this surface by low-energy ion-scattering spectroscopy (ISS) using alkali ions (Na+) .We have found a unit cell of the4 × 2structure consisting of two Ga dimers plus two dimer vacancies from the measured incidence-angle dependence of the scattered-ion intensity in the$[1\bar{1}0]$surface azimuth and an atomic separation in the Ga dimer being about 0.27 nm from that in the [110] surface azimuth. Evidence is presented showing the unit structures being arranged irregularly in the$[1\bar{1}0]$direction around the twofold positions.

Suggested Citation

  • N. Oishi & F. Shoji & A. Konishi & M. Naitoh & S. Nishigaki, 1998. "An ISS Study of Ga-Dimer Arrangement in the GaP(001)-(4 × 2) Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 223-227.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000414
    DOI: 10.1142/S0218625X98000414
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