IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v05y1998i01ns0218625x98000360.html
   My bibliography  Save this article

The$(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$-Reconstructed 6H–SiC(0001): A Semiconducting Surface

Author

Listed:
  • I. Forbeaux

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France)

  • J.-M. Themlin

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France)

  • V. Langlais

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France)

  • L. M. Yu

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France;
    LISE, Facultés Universitaires Notre-Dame de la Paix, 61, rue de Bruxelles, B-5000 NAMUR, Belgium)

  • H. Belkhir

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France)

  • J.-M. Debever

    (Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France)

Abstract

k//-resolved inverse-photoemission spectroscopy of the$(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$reconstruction of 6H–SiC(0001) reveals a sharp surface stateUlocated 1.10±0.05 eV above the Fermi level at the center of the surface Brillouin zone with a total bandwidth of 0.34±0.05 eV. This value is in good agreement with recent LDA calculations which predict an adatom-induced surface stateΣ1which should be half-filled. In this model, the adatoms are Si atoms occupying theT4site above a compact SiC(0001) (Si) termination. In contrast to the predicted metallic behavior, theUstate remains completely unoccupied throughout the whole Brillouin zone, and the surface is semiconducting. We propose that some charge transfer from the Si adatoms towards subsituted C atoms in the terminating bilayer stabilizes the reconstruction by moving up theΣ1state away from the Fermi level.

Suggested Citation

  • I. Forbeaux & J.-M. Themlin & V. Langlais & L. M. Yu & H. Belkhir & J.-M. Debever, 1998. "The$(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$-Reconstructed 6H–SiC(0001): A Semiconducting Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 193-197.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000360
    DOI: 10.1142/S0218625X98000360
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X98000360
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X98000360?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000360. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.