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Structure of Epitaxial CoSi2Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

Author

Listed:
  • U. Starke

    (Lehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany)

  • J. Schardt

    (Lehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany)

  • W. Weiß

    (Lehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany)

  • G. Rangelov

    (Max-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, D-85748 Garching, Germany)

  • Th. Fauster

    (Lehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany;
    Max-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, D-85748 Garching, Germany)

  • K. Heinz

    (Lehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany)

Abstract

Expitaxial films ofCoSi2on Si(111) were investigated by low-energy electron diffraction. Films of approximately 12 Å thickness were prepared by simultaneous deposition of Co and Si and subsequent annealing. The films were found to crystallize inCaF2structure in (111) orientation. Two (1×1) phases of different stoichiometry exist. The surface phase that contains more Co is found to be aCoSi2(111)bulklike structure terminated by a Si–Co–Si trilayer. The Si-rich phase is terminated by an additional nonrotated silicon bilayer with the lower silicon atoms bound to cobalt in the firstCoSi2layer. Consequently, these cobalt atoms have an eightfold coordination. Due to the lattice mismatch the silicide films are expanded by 0.5% in the lateral direction and contracted by 1.4% in the vertical direction.

Suggested Citation

  • U. Starke & J. Schardt & W. Weiß & G. Rangelov & Th. Fauster & K. Heinz, 1998. "Structure of Epitaxial CoSi2Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 139-144.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x9800027x
    DOI: 10.1142/S0218625X9800027X
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