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Photoemission Study of K Doping on a Monolayer of C60on Clean Si(001)-(2 × 1) Surface

Author

Listed:
  • Tun-Wen Pi

    (Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC)

  • Le-Hong Hong

    (Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC)

  • Rong-Tzong Wu

    (Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC)

  • Chiu-Ping Cheng

    (Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, ROC)

  • May-Ho Ko

    (Department of Materials Science, National Tsing Hua University, Hsinchu, Taiwan, ROC)

Abstract

We present the first valence band photoemission study of a monolayerKxC60on a clean Si(001)-(2 × 1) surface. The monolayer C60which shows weak interaction with the silicon surface reveals clear, but broadened, structures corresponding to bulkC60. Upon K exposure, the work function drops rapidly due to charge polarization toward the Si surface, considerably affecting then the rate of the Lumo filling. Its centroid initially shown at 0.6 eV shifts to higher binding energy with higher concentration. Moreover, the LUMO always separates 1.5 ± 0.1 eV from the Homo. Features associated with the many-body effect do not appear in the spectra. The Fermi cutoff has never been observed, indicating the insulating nature of theKxC60surface.

Suggested Citation

  • Tun-Wen Pi & Le-Hong Hong & Rong-Tzong Wu & Chiu-Ping Cheng & May-Ho Ko, 1998. "Photoemission Study of K Doping on a Monolayer of C60on Clean Si(001)-(2 × 1) Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 101-104.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000219
    DOI: 10.1142/S0218625X98000219
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