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First-Principles Study of the As-Mediated Growths of Si and Ge on Si(100)

Author

Listed:
  • Young-Jo Ko

    (Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea)

  • K. J. Chang

    (Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea)

  • Jae-Yel Yi

    (Korea Researc Institute of Standards and Science, PO Box 102, Yusung, Taejon 305-600, Korea)

  • Seong-Ju Park

    (Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-303, Korea)

  • El-Hang Lee

    (Research Department, Electronics and Telecommunications Research Institute, PO Box Yusung, Taejon 305-600, Korea)

Abstract

We study the mechanism of the As-mediated epitaxial growths of Ge and Si on Si(100) surfaces through first-principles pseudopotential calculations. On an As-monolayer-covered Si(100) surface, individual Ge or Si adatoms are found to incorporate rapidly into subsurface As sites with minimum surface diffusion. The segregation of As is initiated by the substitutional adsorptions of individual Ge or Si adatoms. Because of the rapid adatom incorporation, adatom mobility is drastically reduced, compared with the growth without surfactants, resulting in a high density of two-dimensional islands. The inclusion of gradient corrections to the LDA energies does not change our results.

Suggested Citation

  • Young-Jo Ko & K. J. Chang & Jae-Yel Yi & Seong-Ju Park & El-Hang Lee, 1998. "First-Principles Study of the As-Mediated Growths of Si and Ge on Si(100)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 77-80.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000165
    DOI: 10.1142/S0218625X98000165
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