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Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate

Author

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  • J.-M. Gay

    (CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

  • L. Lapéna

    (CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

  • M. Ladevèze

    (CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France)

  • M. Tolan

    (Institut für Experimentalphysik, Christian-Albrechts-Universität, Olshausentrasse 40-60, 24098 Kiel, Germany)

Abstract

We present the results of an X-ray analysis of the surface morphology of a sample obtained by Si MBE onto a higly misoriented Si(111) substrate. X-ray reflectivity and diffuse scattering provide a description of the surface. The amplitude of the surface profile is about 6.6 nm, with a sawtooth shape. Satellites in the diffuse scattering indicate a 215±5 nm periodicity int he miscut direction. The analysis of satellite intensities shows an asymmetry of the surface shape. The results are in agreement with AFM images of the surface.

Suggested Citation

  • J.-M. Gay & L. Lapéna & M. Ladevèze & M. Tolan, 1998. "Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 31-36.
  • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000098
    DOI: 10.1142/S0218625X98000098
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