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Ultrahigh Vacuum Atomic Force Microscopy: True Atomic Resolution

Author

Listed:
  • R. LÜTHI

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

  • E. MEYER

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

  • M. BAMMERLIN

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

  • A. BARATOFF

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

  • L. HOWALD

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

  • CH. GERBER

    (IBM Research Laboratory Zurich, Switzerland)

  • H.-J. GÜNTHERODT

    (Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland)

Abstract

In this note we report the first observation of salient features of the Si(111)(7×7) reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shiftΔfof the Si cantilever and of the mean tunneling current$\bar I_t$from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control viaΔfis problematic, whereas it is as successful as in conventional STM via$\bar I_t$. Furthermore, local dissipation (energy loss of10-14W) through individual atoms is observed and explained by the coupling of the surface atoms to phonons.

Suggested Citation

  • R. Lüthi & E. Meyer & M. Bammerlin & A. Baratoff & L. Howald & Ch. Gerber & H.-J. Güntherodt, 1997. "Ultrahigh Vacuum Atomic Force Microscopy: True Atomic Resolution," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(05), pages 1025-1029.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:05:n:s0218625x9700122x
    DOI: 10.1142/S0218625X9700122X
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