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Surface Modifications: Nanostructures And Nested Polyhedra Generated By Pulsing The Stm Tip

Author

Listed:
  • M. HERSHFINKEL

    (Department of Physics, Ben Gurion University, Beer-Sheva, Israel)

  • L. A. GHEBER

    (Department of Physics, Ben Gurion University, Beer-Sheva, Israel)

  • M. HOMYONFER

    (Department of Materials and Interfaces, Weizmann Institute, Rehovot, Israel)

  • R. TENNE

    (Department of Materials and Interfaces, Weizmann Institute, Rehovot, Israel)

  • V. VOLTERRA

    (Department of Physics, Ben Gurion University, Beer-Sheva, Israel)

Abstract

STM experiments were performed to study modifications on the surface of crystalline and amorphous transition metal chalcogenides. Pulses with different parameters were applied to the STM tip, at predefined locations, while scanning the surface ofWSe2andMoS3. Different types of structures were formed on the crystallineWSe2surface: (a) holes, (b) mounds, (c) ringlike structures. The three types were formed at different ranges of voltage. In some cases local cleavage of the surface was observed. An explanation is offered for the creation of such a variety of structures. On the amorphousMoS3surface the pulses created small, round mounds. The size of the structures grows with the voltage of the applied pulse. I–V characteristics taken on these structures show semiconducting behavior with a gap of 1.1 eV, similar to the gap of bulkMoS2. TEM images show that nested polyhedral structures are formed in the STM experiments, with sizes that agree with the observed structures. Similar round crystalline structures are formed on the surface ofMoS2grown under different conditions. This is the first time that such crystallization is observed by pulsing the STM tip.

Suggested Citation

  • M. Hershfinkel & L. A. Gheber & M. Homyonfer & R. Tenne & V. Volterra, 1997. "Surface Modifications: Nanostructures And Nested Polyhedra Generated By Pulsing The Stm Tip," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(05), pages 1015-1020.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:05:n:s0218625x97001206
    DOI: 10.1142/S0218625X97001206
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