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SURFACE DYNAMICS AND SCANNING TUNNELING MICROSCOPY: DIFFUSION OF PbATOMS ON Si(111)-(7×7)

Author

Listed:
  • J. M. GÓMEZ-RODRÍGUEZ

    (Departamento de Física de la Materia Condensada, C-III, Universidad Autónoma de Madrid, E-28049 Madrid, Spain)

  • J.-Y. VEUILLEN

    (Laboratoire d'Etudes des Propriétés Electroniques des Solides-Centre National de la Recherche Scientifique, B.P. 166, F-38042 Grenoble Cédex 9, France)

  • R. C. CINTI

    (Laboratoire d'Etudes des Propriétés Electroniques des Solides-Centre National de la Recherche Scientifique, B.P. 166, F-38042 Grenoble Cédex 9, France)

Abstract

The very early stages of Pb deposition on Si(111)-(7×7) surfaces have been investigated in real time by scanning tunneling microscopy. Variable temperature measurements combined with unusually long periods of imaging time have enabled us to observe that single Pb atoms are highly mobile within each half of the 7×7 unit cell. Individual jumps of single atoms between different half-cells have been resolved as well as the formation of atom pairs as a result. An activation energy of0.64±0.07eV has been measured for the diffusion of single atoms between different half-cells. Pb atom pairs are also mobile inside half-cells at much slower rates than single atoms. An activation energy of0.40±0.04eV has been measured for this process.

Suggested Citation

  • J. M. Gómez-Rodríguez & J.-Y. Veuillen & R. C. Cinti, 1997. "SURFACE DYNAMICS AND SCANNING TUNNELING MICROSCOPY: DIFFUSION OF PbATOMS ON Si(111)-(7×7)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(02), pages 335-342.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:02:n:s0218625x9700033x
    DOI: 10.1142/S0218625X9700033X
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