IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v04y1997i02ns0218625x97000304.html
   My bibliography  Save this article

Electronic Transport In Epitaxial Films Studied By Scanning Probe Techniques

Author

Listed:
  • H. VON KÄNEL

    (Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland)

  • H. SIRRINGHAUS

    (Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland)

  • T. MEYER

    (Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland)

  • E. Y. LEE

    (Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland)

Abstract

Hot electron transport in epitaxialCoSi2/Siheterostructures has been studiedin situby ballistic electron emission microscopy (BEEM) at 77 K. AtCoSi2/Si(111)interfaces elastic scattering at interfacial defects could be imaged with spatial resolution on a nanometer scale. Hot electron injection acrossCoSi2/n-Si(111)interfaces was found to be favored by interface scattering, in contrast to hot hole injection acrossCoSi2/p-Si(111), in agreement with expectations based on the projected Si band structure. Inelastic scattering within the metal film was found to become dominant at energies above~4eV, leading to a strong sensitivity of the BEEM current on film thickness variations. This could be exploited to generate maps of the film thickness distribution, facilitating the interpretation of quantum size effects (QSE's) which appear both in BEEM and in scanning tunneling spectroscopy. The variation of the BEEM current was found to be entirely due to scattering effects atCoSi2/Si(111)interfaces, the Schottky barrier height being constant. AtCoSi2/Si(100)interfaces, however, a pronounced decrease in the Schottky barrier height was observed at certain interfacial defects, some of which are not yet identified.

Suggested Citation

  • H. Von Känel & H. Sirringhaus & T. Meyer & E. Y. Lee, 1997. "Electronic Transport In Epitaxial Films Studied By Scanning Probe Techniques," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(02), pages 307-318.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:02:n:s0218625x97000304
    DOI: 10.1142/S0218625X97000304
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X97000304
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X97000304?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to

    for a different version of it.

    More about this item

    Keywords

    ;
    ;
    ;
    ;
    ;

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:04:y:1997:i:02:n:s0218625x97000304. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.