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Atomic Structure Of (100) Surfaces Of Zincblende Compound Semiconductors

Author

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  • A. KAHN

    (Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA)

Abstract

This paper provides an overview of our current understanding of atomic geometries of (100) surfaces of III–V, II–VI and I–VII zincblende structure semiconductors. The origins of atomic reconstructions of polar surfaces are reviewed. Fundamental principles are described from which the main aspects of reconstructions at (100) surfaces can be derived. These principles are used to explain and predict stoichiometries and atomic arrangements on these complex surfaces. The most recent structural models of (100) surfaces are reviewed in light of these principles.

Suggested Citation

  • A. Kahn, 1996. "Atomic Structure Of (100) Surfaces Of Zincblende Compound Semiconductors," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(04), pages 1579-1595.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:04:n:s0218625x96002576
    DOI: 10.1142/S0218625X96002576
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