IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v03y1996i02ns0218625x96002308.html
   My bibliography  Save this article

Ab-Initiostudies Of Diffusion And Growth Phenomena On Semiconductor Surfaces

Author

Listed:
  • EFTHIMIOS KAXIRAS

    (Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA)

Abstract

We discuss the application ofab-initioquantum-mechanical calculations, based on pseudopotential local-density-functional theory, to diffusion and growth phenomena on semiconductor surfaces. We examine in detail two specific examples: adatom diffusion on theGe(111)c(2×8)reconstructed surface and surfactant-mediated homoepitaxial growth on Si substrates. In these examples, the combination of results from first-principles calculations and simple simulations helps elucidate complex dynamical phenomena. We also make predictions on the feasibility of using hydrogen as a surfactant on Si substrates, by drawing analogies between the chemical behavior of group-V or group-VI adsorbates and Si-H complexes.

Suggested Citation

  • Efthimios Kaxiras, 1996. "Ab-Initiostudies Of Diffusion And Growth Phenomena On Semiconductor Surfaces," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(02), pages 1295-1303.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:02:n:s0218625x96002308
    DOI: 10.1142/S0218625X96002308
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X96002308
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X96002308?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:03:y:1996:i:02:n:s0218625x96002308. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.