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STABILITY OF ADSORBED HYDROGEN ONSi(100)UNDER CHANGES OF THE SURFACE POTENTIAL

Author

Listed:
  • P. KRATZER

    (Center for Atomic-Scale Materials Physics and Physics Department, Technical University of Denmark, DK-2800 Lyngby, Denmark)

  • B. HAMMER

    (Center for Atomic-Scale Materials Physics and Physics Department, Technical University of Denmark, DK-2800 Lyngby, Denmark;
    Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan)

  • F. GREY

    (Mikroelektronik Centeret, Technical University of Denmark, DK-2800 Lyngby, Denmark)

  • J. K. NØRSKOV

    (Center for Atomic-Scale Materials Physics and Physics Department, Technical University of Denmark, DK-2800 Lyngby, Denmark)

Abstract

We study the effect of an electrostatic surface potential on the chemisorption energy ofH2on aSi(100)2×1surface on the basis of a set of ab initio calculations. We find a sizeable destabilization of the adsorbate, because the clean surface gains in stability compared to the H-terminated surface due to charge transfer between dangling bonds and the space charge region below the surface. We rationalize our results in terms of a simple model and discuss the possibility that potential-induced destabilization is an important ingredient in understanding STM-induced nanolithography.

Suggested Citation

  • P. Kratzer & B. Hammer & F. Grey & J. K. Nørskov, 1996. "STABILITY OF ADSORBED HYDROGEN ONSi(100)UNDER CHANGES OF THE SURFACE POTENTIAL," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(02), pages 1227-1233.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:02:n:s0218625x96002229
    DOI: 10.1142/S0218625X96002229
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