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A Quantum-Sponge Model For Porous Silicon

Author

Listed:
  • S. SAWADA

    (Department of Electrical and Electronics Engineering, Kagoshima University, 1–21–40 Korimoto, Kagoshima 890, Japan)

  • N. OOKUBO

    (Department of Electrical and Electronics Engineering, Kagoshima University, 1–21–40 Korimoto, Kagoshima 890, Japan;
    Fundamental Research Laboratories, NEC Corporation, 4–1–1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216, Japan)

Abstract

We propose a “quantum-sponge” model for porous silicon. This model exhibits energy-gap widening and nonexponential decay of photoluminescence describable by the stretched exponential function. These properties are in good agreement with those observed for porous silicon. We suggest that the fractal character of its wave functions is the origin of the nonexponential decay of photoluminescence.

Suggested Citation

  • S. Sawada & N. Ookubo, 1996. "A Quantum-Sponge Model For Porous Silicon," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 1157-1161.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96002072
    DOI: 10.1142/S0218625X96002072
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