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HOPPING CONDUCTION INSiO2FILMS CONTAINING CLUSTERS OF GROUP-IV ELEMENTS

Author

Listed:
  • Y. INOUE

    (Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan)

  • S. HAYASHI

    (Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan)

  • K. YAMAMOTO

    (Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan)

Abstract

SiO2films doped with C, Si, and Ge atoms were prepared by an rf cosputtering method and their electrical transport properties were measured. The films show nonohmic conduction with a conductivity increasing drastically with increasing the dopant concentration in the films. The observed temperature dependence of the conductivity obeys the lnσ∝T−1/4law, where σ and T are the conductivity and temperature, respectively. This behavior of the conductivity is indicative of the conduction by the variable-range hopping mechanism. Since the previous optical data for the same films indicate the existence of clusters in the films, it is very likely that the hopping is mediated by localized states associated with the clusters.

Suggested Citation

  • Y. Inoue & S. Hayashi & K. Yamamoto, 1996. "HOPPING CONDUCTION INSiO2FILMS CONTAINING CLUSTERS OF GROUP-IV ELEMENTS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 1059-1063.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001893
    DOI: 10.1142/S0218625X96001893
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