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Formation Of Semimagnetic Semiconductor Superlattices By Ionized Cluster-Beam Technique And Their Quantum-Size Effects

Author

Listed:
  • T. KOYANAGI

    (Department of Electrical and Electronic Engineering, Yamaguchi University, 2557, Tokiwadai, Ube 755, Japan)

  • H. OHMOTO

    (Department of Electrical and Electronic Engineering, Yamaguchi University, 2557, Tokiwadai, Ube 755, Japan)

  • K. MATSUBARA

    (Department of Electrical and Electronic Engineering, Yamaguchi University, 2557, Tokiwadai, Ube 755, Japan)

  • H. ANNO

    (Science University of Tokyo, Yamaguchi College, 1–1–1 Daigakudori, Onoda 756, Japan)

Abstract

The formation of semimagnetic semiconductorCd1−xMnxTesuperlattices on GaAs (100) and sapphire (0001) substrates by the ionized cluster-beam (ICB) deposition technique and their quantum-size effects on the optical and magneto-optical properties are reported. The observation of high-order satellite x-ray diffraction and the Raman scattering from folded longitudinal acoustic (LA) phonons suggests that theCd1−xMnxTesuperlattices have a satisfactory periodic structure. Transitions to the subband levels formed in the wells of superlattices are observed in the optical absorption spectra and the magneto-circular dichroism (MCD) spectra. The transition energies shift widely toward higher energies as the well width is decreased. The experimental results for subband energies agree well with the results calculated using the Kronig-Penney band model. The change in MCD peak height with the well width can be explained in terms of the Zeeman splitting of the subband levels and the oscillator strengths of transitions to those levels.

Suggested Citation

  • T. Koyanagi & H. Ohmoto & K. Matsubara & H. Anno, 1996. "Formation Of Semimagnetic Semiconductor Superlattices By Ionized Cluster-Beam Technique And Their Quantum-Size Effects," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 1033-1038.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001856
    DOI: 10.1142/S0218625X96001856
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