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Influence Of The Metallic Cluster Band Degeneracy On The Charge Transfer Between Metallic Cluster And Semiconductor Substrate

Author

Listed:
  • R.J. TARENTO

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

  • P. JOYES

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

  • J. VAN DE WALLE

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

Abstract

A self-consistent analysis of the charge transallographie semiconductor has been investigated with respect to the cluster size, the metal-band degeneracy, and the semiconductor doping concentration. The calculation has been carried out with the Tersoff idea on the pinning of the Fermi level.

Suggested Citation

  • R.J. Tarento & P. Joyes & J. Van De Walle, 1996. "Influence Of The Metallic Cluster Band Degeneracy On The Charge Transfer Between Metallic Cluster And Semiconductor Substrate," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 969-971.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x9600173x
    DOI: 10.1142/S0218625X9600173X
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