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ADSORPTION AND REACTION OFC60ON Si(111) SURFACE: A COMBINED STUDY BY HREELS AND STM

Author

Listed:
  • C.-W. HU

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • A KASUYA

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • S. SUTO

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan;
    Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan)

  • A. WAWRO

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • Y. NISHINA

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

Abstract

A combined system of STM and HREELS has been demonstrated to be a powerful technique for studying the adsorption and reaction ofC60molecules on Si(111) surface, and has bridged the gap between adsorbate bonding states and STM topographic images. We find that the ordered close-packedC60islands can be grown at room temperature. A brief annealing at 800°C gives rise to the aggregation ofC60molecules into three-dimensional islands. In this case, the nearest neighbor distance amongC60molecules has decreased from 10.0 to 9.4 Å as displayed in STM images, and the icosahedral symmetry ofC60has been reduced as showed in the HREELS spectrum. It indicates that the intermolecular covalent bond exists and a new structure has been stimulated by annealingC60film on Si(111) surface. Further annealing results in the formation of SiC film on Si(111) substrate.

Suggested Citation

  • C.-W. Hu & A Kasuya & S. Suto & A. Wawro & Y. Nishina, 1996. "ADSORPTION AND REACTION OFC60ON Si(111) SURFACE: A COMBINED STUDY BY HREELS AND STM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 933-936.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001674
    DOI: 10.1142/S0218625X96001674
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