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Positive And Negative Ionization Probabilities Of Atoms Sputtered Fromc60

Author

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  • P. JOYES

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

  • R.J. TARENTO

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

  • J. VAN DE WALLE

    (Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France)

Abstract

We study the positive and negative ionization probabilitiesP+andP−of atoms sputtered fromC60at energyEc. As the atom leaves the target molecule, its atomic level progressively decouples from the target levels; this can be described by means of the Anderson Hamiltonian with time-dependent parameters. In a first part we neglect the repulsion between electrons and study the positive ionization. We present an exact numerical solution of the Schrödinger equation. We obtain forP+(Ec)a power-law dependence with an exponent slightly varying withEc. This dependence is different from the exponential law given by another commonly used model. In a second part we introduce an intra-atomic repulsion between electrons which allows us to calculate negative ionization probabilities.

Suggested Citation

  • P. Joyes & R.J. Tarento & J. Van De Walle, 1996. "Positive And Negative Ionization Probabilities Of Atoms Sputtered Fromc60," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 777-780.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x9600139x
    DOI: 10.1142/S0218625X9600139X
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