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FORMATION OF INTERFACES AND TEMPLATES IN THESi(111)-CrSYSTEM

Author

Listed:
  • N.I. PLUSNIN

    (Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio, 5, 690041, Vladivostok, 41, Russia)

  • N.G. GALKIN

    (Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio, 5, 690041, Vladivostok, 41, Russia)

  • V.G. LIFSHITS

    (Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio, 5, 690041, Vladivostok, 41, Russia)

  • S.A. LOBACHEV

    (Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio, 5, 690041, Vladivostok, 41, Russia)

Abstract

The literature data and new data on investigation of theSi(111)-Crsystem were systematized to the diagram of structural phase transitions. The ranges on this diagram give the formation conditions of various phases and reflect the mechanism of theCr/Si(111)andCrSi2/Si(111)interface formation during room-temperatureCrdeposition following annealing. The proofs of the multilayer surface phase formation and the data about transitions between the multilayer surface phases and bulk silicides during formation of theCr/Si(111)andCrSi2/Si(111)interfaces were presented. The investigation of A- and B-typeCrSi2templates formation was carried out. It was discovered that nucleation conditions and, in particular, the type of surface phases determine the azimuthal orientation of the epitaxialCrSi2islands relative toSi(111)under their nucleation. The A- and B-typeCrSi2epitaxial films were grown by means of the template technique. The A-typeCrSi2semiconductor film with low concentration and high mobility of holes was obtained.

Suggested Citation

  • N.I. Plusnin & N.G. Galkin & V.G. Lifshits & S.A. Lobachev, 1995. "FORMATION OF INTERFACES AND TEMPLATES IN THESi(111)-CrSYSTEM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(04), pages 439-449.
    • Handle: RePEc:wsi:srlxxx:v:02:y:1995:i:04:n:s0218625x9500039x
    DOI: 10.1142/S0218625X9500039X
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