Author
Listed:
- RAINER HEISE
(Laboratorium für Festkörperphysik, Universität Duisburg, Lotharstr. 1, D-47048 Duisburg, Germany)
- RALF COURTHS
(Laboratorium für Festkörperphysik, Universität Duisburg, Lotharstr. 1, D-47048 Duisburg, Germany)
Abstract
Electronic structure effects induced by potassium adsorption up to one monolayer (ML) on a nearly stoichiometricTiO2(110)surface has been studied by means of angle-resolved photoemission spectroscopy (ARUPS and ARXPS) from valence states and core levels. In agreement with the observations onK/TiO2(100)[P.J. Hardmanet al.,Surf. Sci.269/270, 677 (1992)], potassium adsorption at room temperature leads—due to K-to-substrate charge transfer—to the reduction of surfaceTiions (to nominallyTi3+ions), evidenced by loweredTi2pcore-level binding energy(ΔBE=–1.6eV)and occupation ofTi3d-like band-gap states centered at 0.9 eV BE. The gap-state intensity exhibits a pronounced maximum at 0.37 ML coverage, where the work function has a weak minimum. This behavior is in agreement with a ionic-to-neutral transition of the K-substrate bonding with increasing K coverage, as suggested recently [Soudaet al.,Surf. Sci.285, 265 (1993)]. Annealing of a surface precovered with 0.27 ML potassium up to 1000 K results in metallization of the surface, evidenced by (i) the occupation of a second gap-state centered at 0.4 BE and with a considerable state-density at the Fermi energy, and (ii)Ti2pcore-levels lowered by 3.2 eV in BE (nominally “Ti2+” ions). This dramatic reduction of the surface is healed out with complete desorption of potassium. A discussion in terms of desorption ofKOxspecies and oxygen diffusion from the bulk to the surface is given.
Suggested Citation
Rainer Heise & Ralf Courths, 1995.
"A PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE INDUCED BY POTASSIUM ADSORPTION ONTiO2(110),"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(02), pages 147-152.
Handle:
RePEc:wsi:srlxxx:v:02:y:1995:i:02:n:s0218625x95000145
DOI: 10.1142/S0218625X95000145
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:02:y:1995:i:02:n:s0218625x95000145. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.